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tfdu6101e/tfds6401/tfds6501e/tfdt6501e vishay semiconductors rev. b1.6, 02nov00 1 (17) www.vishay.com document number 82525 fast infrared transceiver module family (fir, 4 mbit/s) for 2.6 v to 5.5 v operation description the tfdu6101e, tfds6401, tfds6501e, tfdt6501e are a family of lowpower infrared transceiver modules compliant to the irda standard for fast infrared data communication, supporting irda speeds up to 4.0 mbit/s (fir), hp-sir, sharp ask and carrier based remote control modes up to 2 mhz. integrated within the transceiver modules are a photo pin diode, an infrared emitter (ired), and a lowpower cmos control ic to provide a total frontend solution in a single package. vishay telefunken's fir transceivers are available in four package options, including our baby face package (tfdu610xe), the standard setting, once smallest fir transceiver available on the market. this wide selection provides flexibility for a variety of applications and space constraints. the transceivers are capable of directly interfacing with a wide variety of i/o devices which perform the modulation/ demodulation function, including national semiconductor's pc87338, pc87108 and pc87109, smc's fdc37c669, fdc37n769 and cam35c44, and hitachi's sh3. at a minimum, a currentlimiting resistor in series with the infrared emitter and a v cc bypass capacitor are the only external components required implementing a complete solution. features compliant to the irda physical layer standard (up to 4 mbit/s), hpsir ? , sharp ask ? and tv remote control for 3.0 v and 5.0 v applications operates from 2.6 v to 5.5 v within specification, operational down to 2.4 v low power consumption (3 ma supply current) power shutdown mode (1 a shutdown current) four surface mount package options universal (9.7 4.7 4.0 mm) side view (13.0 5.95 5.3 mm) top view (13.0 7.6 5.95 mm) dracula (11.2 5.6 2.2 mm) push-pull-receiver output, grounded in shutdown mode high efficiency emitter baby face (universal) package capable of surface mount soldering to side and top view orientation directly interfaces with various super i/o and controller devices builtin emi protection no external shielding necessary few external components required backward pin to pin compatible to all vishay telefunken sir and fir infrared transceivers split power supply, transmitter and receiver can be operated from two power supplies with relaxed requirements, thus saving costs applications notebook computers, desktop pcs, palmtop computers (win ce, palm pc), pdas digital still and video cameras printers, fax machines, photocopiers, screen projectors telecommunication products (cellular phones, pagers) internet tv boxes, video conferencing systems external infrared adapters (dongles) medical and industrial data collection devices
tfdu6101e/tfds6401/tfds6501e/tfdt6501e vishay semiconductors rev. b1.6, 02nov00 2 (17) www.vishay.com document number 82525 package options tfdu6101e baby face (universal) weight 0.20 g tfds6401 dracula side view weight 0.30 g tfds6501e side view weight 0.39 g tfdt6501e top view weight 0.39 g ordering information part number qty / reel description tfdu6101etr4 1000 pcs oriented in carrier tape for side view surface mounting tfdu6101ett4 1000 pcs oriented in carrier tape for top view surface mounting tfds6401tr3 1000 pcs side view tfds6501etr4 750 pcs side view tfdt6501etr4 750 pcs top view functional block diagram comparator amplifier agc logic driver open drain driver v cc sd/mode txd gnd rxd ired anode ired cathode figure 1. functional block diagram
tfdu6101e/tfds6401/tfds6501e/tfdt6501e vishay semiconductors rev. b1.6, 02nov00 3 (17) www.vishay.com document number 82525 pin description pin number function description i/o active auo and ato option aso option function descri tion i/o active 1 8 ired anode ired anode, to be externally connected to v cc through a current control resistor. this pin is allowed to be supplied from an uncontrolled power supply separated from the controlled v cc supply 2 1 ired cathode ired cathode, internally connected to driver transistor 3 7 txd transmit data input i high 4 2 rxd received data output, push-pull cmos driver output capable of driving a stan- dard cmos or ttl load. no external pull-up or pull-down resistor is required. pin is switched to ground when device is in shutdown mode o low 5 6 sd/mode shutdown/ mode i high 6 3 v cc supply voltage 7 5 mode high: high speed mode; low: low speed mode, sir only (see chapter amode switchingo) i 8 4 gnd ground ired detector ired detector ired detector 14885 auo option baby face (universal) and dracula aso option side view ato option top view figure 2. pinnings
tfdu6101e/tfds6401/tfds6501e/tfdt6501e vishay semiconductors rev. b1.6, 02nov00 4 (17) www.vishay.com document number 82525 absolute maximum ratings reference point pin: gnd unless otherwise noted. typical values are for design aid only, not guaranteed nor subject to production testing. parameters test conditions symbol min. typ. max. unit supply voltage range, transceiver 0 v tfdu6101e/tfds6401/tfds6501e/tfdt6501e vishay semiconductors rev. b1.6, 02nov00 5 (17) www.vishay.com document number 82525 electrical characteristics t amb = 25 c, v cc = 2.6v to 5.5 v unless otherwise noted. typical values are for design aid only, not guaranteed nor subject to production testing. parameters test conditions / pins symbol min. typ. max. unit transceiver supply voltage v cc 2.6 5.5 v dynamic supply current receive mode only. in transmit mode, add additional 85 ma (typ) for ired current sd = low, e e = 0 klx i cc 3 4.5 ma sd = low, e e = 1 klx *) i cc 3 4.5 ma standby supply current sd = high, mode = floatin g , i sd mode floating, t = 25 c, e e = 0 klx t = 25 c, e e = 1 klx *) 1 1.5 m a m a sd = high, t = 85 c, mode = floating, not ambient light sensitive i sd 5 m a operating temperature range t a 25 +85 c output voltage low r load = 2.2 k , c load = 15 pf v ol 0.5 0.8 v output voltage high r load = 2.2 k , c load = 15 pf v oh v cc 0.5 v input voltage low (txd, sd/ mode, mode) v il 0 0.8 v input voltage high cmos level **) v ih 0.9 x v cc v in ut voltage high (txd, sd/ mode, mode) ttl level, v cc 4.5 v v ih 2.4 v input leakage current (txd, sd/ mode) i l 10 +10 m a input leakage current, mode i l 80 +80 m a input capacitance c i 5 pf *) standard illuminant a **) the typical threshold level is between 0.5 x v cc/2 (v cc = 3 v) and 0.4 x v cc (v cc = 5.5 v) . it is recommended to use the specified min/ max values to avoid increased operating current.
tfdu6101e/tfds6401/tfds6501e/tfdt6501e vishay semiconductors rev. b1.6, 02nov00 6 (17) www.vishay.com document number 82525 optoelectronic characteristics t amb = 25 c, v cc = 2.6 v to 5.5 v unless otherwise noted. typical values are for design aid only, not guaranteed nor subject to production testing. parameters test conditions symbol min. typ. max. unit receiver minimum detection threshold irradiance, sir mode tfds6501e/ tfdt6501e 9.6 kbit/s to 115.2 kbit/s = 850 nm to 900 nm e e 20 35 mw/m 2 sir mode tfdu6101e, tfds6401 9.6 kbit/s to 115.2 kbit/s = 850 nm to 900 nm e e 25 40 mw/m 2 minimum detection threshold irradiance, mir mode tfds6501e/ tfdt6501e 1.152 mbit/s = 850 nm to 900 nm e e 50 mw/m 2 mir mode tfdu6101e, tfds6401 1.152 mbit/s = 850 nm to 900 nm e e 65 mw/m 2 minimum detection threshold irradiance, fir mode tfds6501e/ tfdt6501e 4.0 mbit/s = 850 nm to 900 nm e e 65 100 mw/m 2 fir mode tfdu6101e, tfds6401 4.0 mbit/s = 850 nm to 900 nm e e 85 100 mw/m 2 maximum detection threshold irradiance = 850 nm to 900 nm e e 5 10 kw/m 2 logic low receiver input irradiance e e 4 mw/m 2 rise time of output signal,,,,klll 10% to 90%, @2.2 k w , 15 pf t r (rxd) 10 40 ns fall time of output signal 90% to 10%, @2.2 k w , 15 pf t f (rxd) 10 40 ns rxd pulse width of input pulse length 20 m s, 9.6 kbit/s t pw 1.2 10 20 m s rxd pulse width of output signal, 50% sir mode input pulse length 1.41 s, 115.2 kbit/s t pw 1.2 1/2 bit length m s rxd pulse width of output signal, 50% mir mode input pulse length 217 ns, 1.152 mbit/s t pw 110 260 ns rxd pulse width of out p ut signal 50% input pulse length 125 ns, 4.0 mbit/s t pw 100 160 ns o utput si gna l , 50% fir mode input pulse length 250 ns, 4.0 mbit/s t pw 200 290 ns stochastic jitter, leading edge, fir mode input irradiance = 100 mw/m 2 , 4.0 mbit/s 10 ns latency t l 120 300 m s
tfdu6101e/tfds6401/tfds6501e/tfdt6501e vishay semiconductors rev. b1.6, 02nov00 7 (17) www.vishay.com document number 82525 optoelectronic characteristics (continued) t amb = 25 c, v cc = 2.6 v to 5.5 v unless otherwise noted. typical values are for design aid only, not guaranteed nor subject to production testing. parameters test conditions symbol min. typ. max. unit transmitter ired operating current r1*) = 7.2 w, v cc = 5.0 v i d 0.4 0.55 a output radiant intensity (see figure 3) v cc = 5.0 v, a = 0 , 15 txd = high, sd = low, r1 = 7.2 w i e 120 170 350 mw/sr output radiant intensity v cc = 5.0 v, a = 0 , 15 txd = low, sd = high, (receiver is inactive as long as sd = high) r1 = 7.2 w i e 0.04 mw/sr output radiant intensity, angle of half intensity 24 peak emission wavelength p 880 900 nm optical output pulse duration input pulse width 217 ns, 1.152 mbit/s t opt 207 217 227 ns duration input pulse width 125 ns, 4 mbit/s t opt 117 125 133 ns input pulse width 250 ns, 4 mbit/s t opt 242 250 258 ns input pulse width t < 80 m s input pulse width t 80 m s t opt t 80 m s optical rise time, fall time t ropt , t fopt 10 40 ns optical overshoot 10 % *) r1: control series resistor for current limitation
tfdu6101e/tfds6401/tfds6501e/tfdt6501e vishay semiconductors rev. b1.6, 02nov00 8 (17) www.vishay.com document number 82525 recommended circuit diagram the only required component for designing an irda 1.3 solution using vishay telefunken transceivers is a current limiting resistor, r1, to the ired. however, depending on the entire system design and board layout, additional components may be required (see figure kein merker). ired cathode ired anode rxd vcc gnd txd sd/mode mode tfdx6x0xe c2 c1 r2 r1 v cc2 rxd gnd v cc1 sd/mode txd note: outlined components are optional depending on the quality of the power supply figure 3. recommended application circuit vishay telefunken transceivers integrate a sensitive receiver and a built-in power driver. the combination of both needs a careful circuit board layout. the use of thin, long, resistive and inductive wiring should be avoided. the inputs (txd, sd/ mode) and the output rxd should be directly (dc) coupled to the i/o circuit. r1 is used for controlling the current through the ir emitter. for increasing the output power of the ired, the value of the resistor should be reduced. similarly, to reduce the output power of the ired, the value of the resistor should be increased. for typical values of r1 see figure 4. for irda compliant operation, a current control resistor of 7.2 w is recommended. for compensating losses of the cos- metic window, reducing that value to 5.6 w is acceptable. the upper drive current limitation is dependent on the duty cycle and is given by the absolute maximum ratings on the data sheet. r2, c1 and c2 are optional and dependent on the quality of the supply voltage v cc and injected noise. an unstable power supply with dropping voltage during transmission may reduce sensitivity (and transmission range) of the transceiver. the placement of these parts is critical. it is strongly recommended to position c2 as near as possible to the transceiver power supply pins. an electrolytic capacitor should be used for c1 while a ceramic capacitor is used for c2. table 1. recommended application circuit components component recommended value vishay part number c1 4.7 f, tantalum 293d 475x9 016b 2t c2 0.1 m f, ceramic vj 1206 y 104 j xxmt r1 5 v supply voltage: 7.2 w , 0.25 w (recommend using two 3.6 , 0.125 w resistors in series) 3.3 v supply voltage: 3.6 w , 0.25 w (recommend using two 1.8 , 0.125 w resistors in series) crcw12063r60frt1 crcw12061r80frt1 r2 47 w , 0.125 w crcw120647r0frt1
tfdu6101e/tfds6401/tfds6501e/tfdt6501e vishay semiconductors rev. b1.6, 02nov00 9 (17) www.vishay.com document number 82525 0 100 200 300 400 500 0246810121416 current control resistor ( ) 14379 intensity (mw/sr) min. intensity in emission cone 15 max.r dson , max.v f max. intensity in emission cone 15 v cc =4.75v min. r dson , min. v f 5.0v 5.0v 5.25v figure 4. intensity i e vs. current control resistor r1, 5 v applications 0 100 200 300 400 500 600 700 024681012 current control resistor ( ) 15111 intensity (mw/sr) emission cone 15 v cc =3.0v min. r dson , min. v f 3.3v 3.3v 3.6v max. intensity in emission cone 15 max. r dson , max. v f min. intensity in figure 5. intensity i e vs. current control resistor r1, 3 v applications in addition, when connecting the described circuit to the power supply, low impedance wiring should be used. i/o and software in the description, already different i/os are mentioned. differnt combinations are tested and the function verified with the special drivers available from the i/o suppliers. in special cases refer to the i/o manual, the vishay application notes, or contact directly vishay sales, marketing or application. control: differences to tfdx6000 series for applications using i/os from nsc, winbond and ti no software upgrade is necessary. in combination with the latest smsc controllers for microsoft windows 98 ? a software upgrade is necessary, drivers are available from smsc and vishay semiconductor gmbh. this software is intended to work with windows 95 ? , too. alternatively the hp/ sharp settings can be selected. the microsoft operating systems nt 5.0 ? beta 2 and windows 2000 ? provide miniport device drivers. mode switching the tfdu6101e, tfds6401, tfds6501e and tfdt6501e do not power on with a default mode, therefore the data transfer rate has to be set by a programming sequence using the txd and sd/ mode inputs as described below or selected by setting the mode pin. the mode pin can be used to statically set the mode (mode pin: low: sir, high: 0.576 mbit/s to 4.0 mbit/s). when using the mode pin, the standby current may increase to about 50 to 60 a when high or low. if not used or in standby mode, the mode input should float to minimize standby current. the low frequency mode covers speeds up to 115.2 kbit/s. signals with higher data rates should be detected in the high frequency mode. lower frequency data can also be received in the high frequency mode but with reduced sensitivity. to switch the transceivers from low frequency mode to the high frequency mode and vice versa, the programming sequences described below are required. txd sd/mode t s t h 50% high : fir low : sir 50% 50% 14873 figure 6. mode switching timing diagram setting to the high bandwidth mode (0.576 mbit/s to 4.0 mbit/s) 1. set sd/mode input to logic ahigho. 2. set txd input to logic ahigho. wait t s 200 ns. 3. set sd/mode to logic alowo (this negative edge latches state of txd, which determines speed setting). 4. after waiting t h 200 ns txd can be set to logic alowo. the hold time of txd is limited by the maximum allowed pulse length. txd is now enabled as normal txd input for the high bandwidth mode.
tfdu6101e/tfds6401/tfds6501e/tfdt6501e vishay semiconductors rev. b1.6, 02nov00 10 (17) www.vishay.com document number 82525 setting to the lower bandwidth mode (2.4 kbit/s to 115.2 kbit/s) 1. set sd/mode input to logic ahigho. 2. set txd input to logic alowo. wait t s 200 ns. 3. set sd/mode to logic alowo (this negative edge latches state of txd, which determines speed setting). 4. txd must be held for t h 200 ns. txd is now enabled as normal txd input for the lower bandwidth mode. recommended smd pad layout the leads of the device should be soldered in the center position of the pads. 16524 0.6 ( 0.7) 7 x 1 = 7 8 1 1 2.5 ( 2.0) figure 7. tfdu6101e babyface (universal) figure 8. tfds6401 (dracula)
tfdu6101e/tfds6401/tfds6501e/tfdt6501e vishay semiconductors rev. b1.6, 02nov00 11 (17) www.vishay.com document number 82525 11.8 5.08 2.54 2.54 5 876 1.8 0.63 1.1 1.0 0.63 1 8.3 2.2 4 123 2.54 2.54 5.08 15069 figure 9. tfds6501e side view package pad 1 is longer to designate pin 1 connection to transceiver. 1.27 0.8 18 8.89 1.8 15068 figure 10. tfdt6501e top view package pad 1 is longer to designate pin 1 connection to transceiver. note: leads of the device should be at least 0.3 mm within the ends of the pads. recommended solder profile time ( s ) temperature ( c ) 14874 0 30 60 90 120 150 180 210 240 0 50 100 150 200 250 300 350 2 - 4 c/s 10 s max. @ 230 c 90 s max. 120 - 180 s 2 - 4 c/s figure 11. recommended solder profile current derating diagram 0 100 200 300 400 500 600 40 20 0 20 40 60 80 100 120 140 peak operating current ( ma ) temperature ( c ) 14875 current derating as a function of the maximum forward current of ired. maximum duty cycle: 25%. figure 12. current derating diagram
tfdu6101e/tfds6401/tfds6501e/tfdt6501e vishay semiconductors rev. b1.6, 02nov00 12 (17) www.vishay.com document number 82525 tfdu6101e baby face (universal) package (mechanical dimensions) 12249
tfdu6101e/tfds6401/tfds6501e/tfdt6501e vishay semiconductors rev. b1.6, 02nov00 13 (17) www.vishay.com document number 82525 tfds6401 package (mechanical dimensions) 15971
tfdu6101e/tfds6401/tfds6501e/tfdt6501e vishay semiconductors rev. b1.6, 02nov00 14 (17) www.vishay.com document number 82525 tfds6501e side view package (mechanical dimensions) 14322
tfdu6101e/tfds6401/tfds6501e/tfdt6501e vishay semiconductors rev. b1.6, 02nov00 15 (17) www.vishay.com document number 82525 tfdt6501e top view package (mechanical dimensions) 14325
tfdu6101e/tfds6401/tfds6501e/tfdt6501e vishay semiconductors rev. b1.6, 02nov00 16 (17) www.vishay.com document number 82525 revision history: b1.1, 01/03/1999: new edition for optimized e family. tfdxxx01e rxd output is grounded when the device is switched to shutdown mode. b1.2, 15/03/1999: a clean tri-state version with floating output in shutdown mode was added as 02 version. the output radiant intensity was increased. b1.4a, 26/10/1999:tr3 changed to tr4 for 01 types, weight of packages added. b1.4b, 22/11/1999:max. operating current changed from 4.0 ma to 4.5 ma, dracula package version added, some typos corrected. b1.5, 13/10/2000: typos corrected b1.6, 02/11/2000: smd pad layout tolerances added
tfdu6101e/tfds6401/tfds6501e/tfdt6501e vishay semiconductors rev. b1.6, 02nov00 17 (17) www.vishay.com document number 82525 ozone depleting substances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency (epa ) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 ( 0 )7131 67 2831, fax number: 49 ( 0 )7131 67 2423
legal disclaimer notice vishay document number: 91000 www.vishay.com revision: 08-apr-05 1 notice specifications of the products displayed herein are subjec t to change without notice. vishay intertechnology, inc., or anyone on its behalf, assume s no responsibility or liability fo r any errors or inaccuracies. information contained herein is intended to provide a product description only. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. except as provided in vishay's terms and conditions of sale for such products, vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and /or use of vishay products including liab ility or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyrigh t, or other intellectual property right. the products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify vishay for any damages resulting from such improper use or sale.

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